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74V2T132 データシートの表示(PDF) - STMicroelectronics

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74V2T132
ST-Microelectronics
STMicroelectronics 
74V2T132 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
74V2T132
DC SPECIFICATIONS
Symbol
Parameter
Vt+ High Level
Threshold Voltage
Vt- Low Level
Threshold Voltage
Vh Hysteresis Voltage
VOH High Level Output
Voltage
VOL Low Level Output
Voltage
II
ICC
ICC
IOPD
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
Output Leakage
Current
Test Condition
Value
VCC
TA = 25°C
-40 to 85°C -55 to 125°C Unit
(V)
Min. Typ. Max. Min. Max. Min. Max.
4.5
0.9
2.0 0.9 2.0 0.9 2.0
V
5.5
1.1
2.0 1.1 2.0 1.1 2.0
4.5
0.5
1.5 0.5 1.5 0.5 1.5
V
5.5
0.6
1.6 0.6 1.6 0.6 1.6
4.5
0.4
1.4 0.4 1.4 0.4 1.4
V
5.5
0.5
1.6 0.5 1.6 0.5 1.6
4.5
IO=-50 µA
4.4 4.5
4.4
4.4
V
4.5
IO=-8 mA
3.94
3.8
3.7
4.5
IO=50 µA
4.5
IO=8 mA
0.0 0.1
0.36
0.1
0.44
0.1
V
0.55
0 to
5.5
VI = 5.5V or GND
± 0.1
± 1.0
± 1.0 µA
5.5 VI = VCC or GND
One Input at 3.4V,
5.5 other input at VCC
or GND
1
10
1.35
1.5
20 µA
1.5 mA
0
VOUT = 5.5V
0.5
5.0
5.0 µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC (*) CL
(V) (pF)
tPLH Propagation Delay 5.0 15
tPHL Time
5.0 50
(*) Voltage range is 5.0V ± 0.5V
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
3.7 5.5 1.0 6.5 1.0 6.5
ns
5.2 7.5 1.0 8.5 1.0 8.5
CAPACITANCE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10
10
10 pF
CPD Power Dissipation
Capacitance
19
pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivqlent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2
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