ADG5209BCPZ-RL7(RevA) データシートの表示（PDF） - Analog Devices
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ADG5209BCPZ-RL7 Datasheet PDF : 24 Pages
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Data Sheet
ADG5208/ADG5209
Parameter
Drain Off Leakage, ID (Off )
Channel On Leakage, ID (On), IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tD
Charge Injection, QINJ
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
ADG5208
ADG5209
Insertion Loss
CS (Off )
CD (Off )
ADG5208
ADG5209
CD (On), CS (On)
ADG5208
ADG5209
POWER REQUIREMENTS
IDD
VDD
25°C
±0.005
±0.1
±0.01
±0.2
0.002
3
185
230
170
210
125
180
70
0.4
−90
−90
65
130
−6
5.5
51
25
57
32
80
100
−40°C to +85°C
±0.4
±0.5
245
230
180
−40°C to +125°C
±1.4
±1.4
2.0
0.8
±0.1
259
255
180
35
130
9/40
Unit
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
MHz typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
V min/V max
Test Conditions/Comments
VS = 1 V/30 V, VD = 30 V/1 V; see
Figure 30
VS = VD = 1 V/30 V; see Figure 27
VIN = VGND or VDD
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 35
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 35
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 18 V; see Figure 34
VS = 18 V, RS = 0 Ω, CL = 1 nF;
see Figure 36
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 31
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
RL = 50 Ω, CL = 5 pF; see Figure 32
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 32
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VDD = 39.6 V
Digital inputs = 0 V or VDD
GND = 0 V, VSS = 0 V
1 Guaranteed by design; not subject to production test.
Rev. A | Page 7 of 24
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