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ADG636YRU-REEL データシートの表示(PDF) - Analog Devices
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ADG636YRU-REEL
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Analog Devices
ADG636YRU-REEL Datasheet PDF : 16 Pages
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ADG636
Parameter
POWER REQUIREMENTS
I
DD
1
Guaranteed by design; not subject to production test.
+25°C −40°C to +85°C
0.001
−40°C to +125°C
1.0
Unit
μA typ
μA max
Test Conditions/Comments
V
DD
= 5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
Rev. B | Page 6 of 16
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