MT28F002B5SG-6B データシートの表示（PDF） - Micron Technology

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MT28F002B5SG-6B

FLASH MEMORY

Micron Technology 

2Mb

SMART 5 BOOT BLOCK FLASH MEMORY

WRITE/ERASE CYCLE ENDURANCE

The MT28F002B5 and MT28F200B5 are designed

and fabricated to meet advanced firmware storage re-

quirements. To ensure this level of reliability, VPP must

be at 5V ±10% during WRITE or ERASE cycles. Due to

process technology advances, 5V VPP is optimal for

application and production programming. For back-

ward compatibility with SmartVoltage technology, 12V

VPP is supported for a maximum of 100 cycles and may

be connected for up to 100 cumulative hours. Opera-

tion outside these limits may reduce the number of

WRITE and ERASE cycles that can be performed on the

device.

POWER USAGE

The MT28F002B5 and MT28F200B5 offer several

power-saving features that may be utilized in the array

read mode to conserve power. Deep power-down mode

is enabled by bringing RP# LOW. Current draw (ICC) in

this mode is a maximum of 20µA at 5V VCC. When CE#

is HIGH, the device will enter standby mode. In this

mode, maximum ICC current is 130µA at 5V. If CE# is

brought HIGH during a WRITE or ERASE, the ISM will

continue to operate, and the device will consume the

respective active power until the WRITE or ERASE is

completed.

POWER-UP

The likelihood of unwanted WRITE or ERASE opera-

tions is minimized since two consecutive cycles are

required to execute either operation. However, to reset

the ISM and to provide additional protection while VCC

is ramping, one of the following conditions must be

met:

• RP# must be held LOW until VCC is at valid

functional level; or

• CE# or WE# may be held HIGH and

RP# must be toggled from VCC-GND-VCC.

After a power-up or RESET, the status register is reset,

and the device will enter the array read mode.

RP#

VCC

(5V)

,,,,,, Address

Note 1

tAA

VALID

,,

Data

NOTE:

VALID

,, tRWH

UNDEFINED

1. VCC must be within the valid operating range before RP#

goes HIGH.

Figure 2

Power-Up/Reset Timing Diagram

2Mb Smart 5 Boot Block Flash Memory

F50.p65 – Rev. 1/00

14

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000, Micron Technology, Inc.

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