AO4821(2010) データシートの表示（PDF） - Alpha and Omega Semiconductor
部品番号
コンポーネント説明
メーカー
AO4821 Datasheet PDF : 5 Pages
| |||
AO4821
12V Dual P-Channel MOSFET
General Description
Product Summary
The AO4821 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
100% UIS Tested
100% Rg Tested
-12V
-9A
< 19mΩ
< 24mΩ
< 30mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1
8 D2
Rg
G2 2
S1 3
7
D2 G1
6 D1
G1 4
5 D1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-12
±8
-9
-7
-60
2
1.28
-55 to 150
D1
1
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
48
74
Maximum Junction-to-Lead
Steady-State
RθJL
32
Max
62.5
90
40
D2
Rg
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Nov 2010
www.aosmd.com
Page 1 of 5
Share Link: 