AOD468 データシートの表示（PDF） - Alpha and Omega Semiconductor

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AOD468

300V,11.5A N-Channel MOSFET

Alpha and Omega Semiconductor 

AOD468/AOI468

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=300V, VGS=0V

VDS=240V, TJ=125°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±30V

VGS(th)

RDS(ON)

gFS

VSD

IS

Gate Threshold Voltage

VDS=5V ID=250µA

Static Drain-Source On-Resistance

VGS=10V, ID=6A

Forward Transconductance

VDS=40V, ID=6A

Diode Forward Voltage

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

ISM

Maximum Body-Diode Pulsed Current

300

350

V

0.29

V/ oC

1

µA

10

±100 nΑ

3.4

4

4.5

V

0.31 0.42 Ω

11

S

0.74 1

V

12

A

29

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

VGS=0V, VDS=25V, f=1MHz

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=240V, ID=12A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=150V, ID=12A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V

500 632 790 pF

55

90 125 pF

3

7

11

pF

1.3 2.7 4.1

Ω

10 12.8 16 nC

4.4

nC

4.3

nC

18

ns

31

ns

36

ns

20

ns

130 170 205 ns

1

1.3 1.6 µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting

the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T J(MAX)=175°C.

G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

H. L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0: Dec 2010

www.aosmd.com

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