AP2182AMPG-13 データシートの表示（PDF） - Diodes Incorporated.
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AP2182AMPG-13 Datasheet PDF : 16 Pages
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AP2182A/ AP2192A
Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.)
Symbol
Parameter
Test Conditions (Note 5)
Min
VUVLO Input UVLO
-
1.6
ISHDN Input Shutdown Current
Disabled, IOUT = 0
-
IQ
Input Quiescent Current, Dual
Enabled, IOUT = 0
-
ILEAK Input Leakage Current
Disabled, OUT grounded
-
IREV Reverse Leakage Current
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN
-
VIN = 5V, IOUT = 1.5A,
TA = +25°C
SO-8
-
MSOP-8EP,
U-DFN3030-8 (Type E)
-
RDS(ON) Switch On-Resistance
VIN = 5V, IOUT = 1.5A, -40°C ≤ TA ≤ +85°C
-
VIN = 3.3V, IOUT = 1.5A,
TA = +25°C
SO-8
-
MSOP-8EP,
U-DFN3030-8 (Type E)
-
VIN = 3.3V, IOUT = 1.5A, -40°C ≤ TA ≤ +85°C
-
ILIMIT Overload Current Limit
VIN = 5V, VOUT = 4V, CL = 10µF -40°C ≤ TA ≤ +85°C
1.6
ILIMIT_G Ganged Overload Current Limit
VIN = 5V, VOUT = 4.6V, OUT1 &
OUT2 tied together, CL = 10µF
-40°C ≤ TA ≤ +85°C
3.2
ITrig
ITrig_G
IOS
Current Limiting Trigger Threshold
Ganged Current Limiting Trigger
Threshold
Short-Circuit Current per Channel
IOS_G Ganged Short-Circuit Current
Output Current Slew rate (<100A/s), CL = 10µF
-
OUT1 & OUT2 tied together, Output Current Slew rate
(<100A/s), CL = 10µF
-
OUTx connected to ground, device enabled into short
circuit, CL = 10µF
-
OUT1 & OUT2 connected to ground, device enabled into
short-circuit, CL = 10µF
3.2
TSHORT Short-Circuit Response Time
VOUT = 0V to IOUT = ILIMIT (output shorted to ground)
-
VIL EN Input Logic Low Voltage
VIN = 2.7V to 5.5V
-
VIH EN Input Logic High Voltage
VIN = 2.7V to 5.5V
2
ISINK EN Input Leakage
VEN = 0V to 5.5V
-
ILEAK-O Output Leakage Current
Disabled, VOUT = 0V
-
TR Output Turn-On Rise Time
CL = 1µF, RLOAD = 5Ω
-
TF Output Turn-Off Fall Time
CL = 1µF, RLOAD = 5Ω
-
TD(ON) Output Turn-On Delay Time
CL = 100µF, RLOAD = 5Ω
-
TD(OFF) Output Turn-Off Delay Time
CL = 100µF, RLOAD = 5Ω
-
RFLG FLG Output FET On-Resistance
IFLG = 10mA
-
IFOH FLG Off Current
VFLG = 5V
-
TBlank FLG Blanking Time
CL = 10µF
4
RDIS Discharge Resistance (Note 6)
VIN = 5V, disabled, IOUT =1mA
-
TSHDN Thermal Shutdown Threshold
Enabled, RLOAD =1kΩ
-
THYS Thermal Shutdown Hysteresis
-
-
SO-8 (Note 7)
-
θJA Thermal Resistance Junction-to-Ambient MSOP-8EP (Note 8)
-
U-DFN3030-8 (Type E) (Note 8)
Typ Max Unit
2.0 2.4 V
0.1
1
µA
115 180 µA
-
1
µA
0.01 0.1 µA
90 110
85 105
-
135 mΩ
110 130
105 125
-
170
-
2.0 2.4 A
4.0 4.8 A
2.5
-
A
5.0
-
A
2.0
-
A
4.0 4.8 A
2
-
µs
-
0.8 V
-
-
V
-
1
µA
0.5
1
µA
0.6 1.5 ms
0.05 0.3 ms
0.2 0.5 ms
0.1 0.3 ms
20
40
Ω
0.01 1
µA
7
15 ms
100
-
Ω
140
-
C
25
-
C
115
-
75
- °C/W
60
-
Notes:
5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when VIN < VUVLO). The
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.
8. Test condition for MSOP-8EP and U-DFN3030-8 (Type E): Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended
pad on top layer and thermal vias to bottom layer ground plane.
AP2182A_92A
Document number: DS32193 Rev. 4 - 2
4 of 16
www.diodes.com
October 2016
© Diodes Incorporated
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