AT29LV512-25TI データシートの表示（PDF） - Atmel Corporation
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AT29LV512-25TI Datasheet PDF : 14 Pages
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Features
• Single Supply Voltage, Range 3V to 3.6V
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Low-power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Fast Read Access Time – 120 ns
• Sector Program Operation
– Single-cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time – 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 40 µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
512K (64K x 8)
3-volt Only
Flash Memory
AT29LV512
Pin Configurations
Pin Name
Function
A0 - A15
CE
Addresses
Chip Enable
OE
WE
I/O0 - I/O7
NC
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
TSOP Top View
Type 1
A11 1
A9 2
A8 3
A13 4
A14 5
NC 6
WE 7
VCC 8
NC 9
NC 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Rev. 0177M–05/02
1
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