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BC857BV データシートの表示(PDF) - Diodes Incorporated.

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BC857BV Datasheet PDF : 5 Pages
1 2 3 4 5
BC857BV
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
-45
-5.0
-100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage (Note 7)
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage (Note 7)
DC Current Gain (Note 7)
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Voltage (Note 7)
Collector Cut-Off Current (Note 7)
Gain Bandwidth Product
Output Capacitance
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
ICBO
fT
COB
NF
Min
-50
-45
-5
220
-600
100
Typ
290
-700
-900
Max
475
-100
-400
-750
-820
-15
-4.0
4.5
10
Unit
V
V
V
mV
mV
mV
nA
µA
MHz
pF
dB
Test Condition
IC = 10µA, IB = 0
IC = 10mA, IB = 0
IE = 1µA, IC = 0
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCB = -30V
VCB = -30V, TA = +150°C
VCE = -5.0V, IC = -10mA, f = 100MHz
VCB = -10V, f = 1.0MHz
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz
Notes:
6. Device mounted on FR-4 PCB, 1-inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BC857BV
Document number: DS30433 Rev. 7 - 2
2 of 5
www.diodes.com
March 2015
© Diodes Incorporated

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