BC856BDW1T3G データシートの表示（PDF） - ON Semiconductor
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BC856BDW1T3G Datasheet PDF : 6 Pages
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BC856BDW1T1G,
BC857BDW1T1G Series,
BC858CDW1T1G Series
Preferred Devices
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
V
BC856
−65
BC857
−45
BC858
−30
Collector −Base Voltage
VCBO
V
BC856
−80
BC857
−50
BC858
−30
Emitter −Base Voltage
Collector Current −Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−5.0
−100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation Per Device
PD
380
mW
FR−5 Board (Note 1)
250
TA = 25°C
Derate Above 25°C
3.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
328
°C/W
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in
1
SOT−363/SC−88
CASE 419B
STYLE 1
MARKING DIAGRAM
3x M G
G
3x = Specific Device Code
x = B, F, G, or L
(See Ordering Information)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 7
Publication Order Number:
BC856BDW1T1/D
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