BD317 データシートの表示（PDF） - SavantIC Semiconductor
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BD317 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD317
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
VBE(on) Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A ;IB=0.8A
IC=8A ;VCE=2.0V
VCB=100V;IE=0
VEB=7V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
fT
DC current gain
Transition frequency
IC=10A ; VCE=4V
IC=1A ; VCE=20V,f=0.5MHz
MIN TYP. MAX UNIT
100
V
1.0
V
1.8
V
1.5
V
1.0
mA
1.0
mA
25
15
1.0
MHz
2
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