BD895A データシートの表示（PDF） - Inchange Semiconductor
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BD895A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD895A/897A/899A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD895A
45
V(BR)CEO
Collector-emitter
breakdown voltage
BD897A IC=100mA, IB=0
60
V
BD899A
80
VCEsat Collector-emitter saturation voltage IC=4A ,IB=16mA
2.8
V
VBE
Base-emitter on voltage
IC=4A ; VCE=3V
2.5
V
ICBO
Collector
cut-off current
BD895A
BD897A
BD899A
VCB=45V, IE=0
TC=100℃
VCB=60V, IE=0
TC=100℃
VCB=80V, IE=0
TC=100℃
0.2
2.0
0.2
2.0
mA
0.2
2.0
BD895A VCE=30V, IB=0
固I电NC半H导A体NGE SEMICONDUCTOR ICEO
Collector
cut-off current
BD897A VCE=30V, IB=0
BD899A VCE=40V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=4A ; VCE=3V
VEC
Diode forward voltage
IE=8A
0.5
mA
2
mA
750
3.5
V
ton
Turn-on time
IC=3A ; IB1=-IB2=12mA
1
μs
toff
Turn-off time
VBE=-3.5V;RL=10Ω;tp=20μs
5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
1.79
UNIT
℃/W
2
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