BDX86 データシートの表示（PDF） - Inchange Semiconductor

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BDX86

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

BDX86/A/B/C

DESCRIPTION

·High DC Current Gain-

: hFE= 750(Min)@ IC= -3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A

-80V(Min)- BDX86B; -100V(Min)- BDX86C

·Complement to Type BDX85/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

BDX86

-45

UNIT

BDX86A

-60

VCBO

Collector-Base Voltage

V

BDX86B

-80

BDX86C -100

BDX86

-45

BDX86A

-60

VCEO

Collector-Emitter Voltage

V

BDX86B

-80

BDX86C -100

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IBB

Base Current

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-100

mA

100

W

200

℃

Tstg

Storage Temperature Range

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.75 ℃/W

isc Website：www.iscsemi.cn

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