BF1217 データシートの表示（PDF） - NXP Semiconductors.
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BF1217 Datasheet PDF : 17 Pages
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NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
4. Marking
Table 4. Marking
Type number
BF1217WR
Marking
VA%
Description
% = p : made in Hong Kong
% = t : made in Malaysia
% = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
VDS
drain-source voltage
ID
drain current
IG1
gate1 current
IG2
gate2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
DC
DC
Tsp 107 C
-
-
-
-
[1] -
65
-
[1] Tsp is the temperature at the soldering point of the source lead.
Max
6
30
10
10
180
+150
150
Unit
V
mA
mA
mA
mW
C
C
250
Ptot
(mW)
200
150
100
50
0
0
50
Fig 1. Power derating curve
001aac193
100
150
200
Tsp (˚C)
BF1217WR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 June 2011
© NXP B.V. 2011. All rights reserved.
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