BLF2022-70 データシートの表示（PDF） - Philips Electronics

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BLF2022-70

UHF power LDMOS transistor

Philips Electronics 

Philips Semiconductors

UHF power LDMOS transistor

Product specification

BLF2022-70

FEATURES

• Typical W-CDMA performance at a supply voltage of

28 V and IDQ of 1 A:

– Output power = 7.5 W (AV)

– Gain = 12.5 dB

– Efficiency = 20%

– ACPR = −42 dBc at 3.84 MHz

– dim = −36 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (2000 to 2200 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for W-CDMA base stations and

multicarrier applications in the 2000 to 2200 MHz

frequency range.

PINNING - SOT502A

PIN

DESCRIPTION

1

drain

2

gate

3

source, connected to flange

handbook, halfpage

1

2

Top view

3

MBK394

Fig.1 Simplified outline.

DESCRIPTION

70 W LDMOS power transistor for base station

applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

MODE OF OPERATION

f

(MHz)

VDS

(V)

2-tone, class-AB

f1 = 2170; f2 = 2170.1

28

PL

(W)

65 (PEP)

Gp

(dB)

>11

ηD

dim

(%)

(dBc)

>30

≤−25

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Feb 24

2

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