BLW87 データシートの表示（PDF） - Philips Electronics
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BLW87 Datasheet PDF : 11 Pages
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Philips Semiconductors
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLW87
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
f
PL
Gp
η
V
MHz
W
dB
%
c.w.
13,5
175
25
>6
> 70
zi
Ω
1,6 + j1,4
YL
mS
210 + j5,5
PIN CONFIGURATION
halfpage
1
2
4
handbook, halfpage
c
b
MBB012
e
3
MSB057
Fig.1 Simplified outline and symbol.
PINNING - SOT123
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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