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BS616LV1011 データシートの表示(PDF) - Brilliance Semiconductor
部品番号
コンポーネント説明
メーカー
BS616LV1011
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
Brilliance Semiconductor
BS616LV1011 Datasheet PDF : 9 Pages
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9
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
RC
ADDRESS
t
OH
t
AA
D
OUT
READ CYCLE2
(1,3,4)
CE
LB,UB
D
OUT
t
ACS
t
BA
(5)
t
CLZ
t
BE
READ CYCLE3
(1,4)
ADDRESS
t
RC
t
AA
OE
t
OE
CE
LB,UB
t
OLZ
t
(5)
ACS
t
CLZ
t
BA
t
BE
D
OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV1011
5
BS616LV1011
t
OH
t
(5)
CHZ
t
BDO
t
OH
t
OHZ
(5)
t
(1,5)
CHZ
t
BDO
Revision 1.0
Apr. 2004
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