BS616LV4017(2006) データシートの表示（PDF） - Brilliance Semiconductor

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BS616LV4017
(Rev.:2006)

Very Low Power CMOS SRAM 256K X 16 bit

Brilliance Semiconductor 

n Revision History

Revision No. History

1.2

Add Icc1 characteristic parameter

Improve Iccsb1 spec.

I-grade from 60uA to 20uA at 5.0V

10uA to 4.0uA at 3.0V

C-grade from 30uA to 10uA at 5.0V

5.0uA to 2.0uA at 3.0V

1.3

Change I-grade operation temperature range

- from –25OC to –40OC

BS616LV4017

Draft Date

Jan. 13, 2006

Remark

May. 25, 2006

R0201-BS616LV4017

11

Revision 1.3

May.

2006

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