BSP613PH6327 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

BSP613PH6327

SIPMOS Small-Signal-Transistor

Infineon Technologies 

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = -2.9 A, VGS = -10 V

0.34

W

0.28

0.24

0.20

0.16

98%

typ

0.12

0.08

0.04

0.00

-60 -20 20

60 100

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

10 4

°C

180

Tj

BSP613P

10 Gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS, ID = -1 mA

-5.0

V

98%

-4.0

-3.5

typ

-3.0

-2.5

2%

-2.0

-1.5

-1.0

-0.5

0.0

-60 -20

20

60 100 °C

180

Tj

12 Forward characteristics of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

-10 2

pF

A

10 3

-10 1

Ciss

Coss

10 2

Crss

-10 0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

10 1

0

-5 -10 -15 -20 -25 -30 V -40

VDS

-10 -1

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

Rev.2.8

Page 6

2016-05-30

Share Link: