BT137-600D データシートの表示（PDF） - NXP Semiconductors.
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BT137-600D Datasheet PDF : 13 Pages
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NXP Semiconductors
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 8
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 9
VT
on-state voltage
IT = 10 A; Tj = 25 °C; see Figure 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
ID
off-state current
Dynamic characteristics
VD = 600 V; Tj = 125 °C
dVD/dt
rate of rise of off-state VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;
voltage
exponential waveform; gate open circuit
tgt
gate-controlled turn-on ITM = 12 A; VD = 600 V; IG = 0.1 mA;
time
dIG/dt = 5 A/µs
BT137-600D
4Q Triac
Min Typ Max Unit
-
2.5 5
mA
-
3.5 5
mA
-
3.5 5
mA
-
6.5 10 mA
-
1.6 15 mA
-
8.5 20 mA
-
1.2 15 mA
-
2.5 20 mA
-
1.5 10 mA
-
1.3 1.65 V
-
0.7 1.5 V
0.25 0.4 -
V
-
0.1 0.5 mA
-
5
-
V/µs
-
2
-
µs
BT137-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 March 2011
© NXP B.V. 2011. All rights reserved.
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