BT151UC データシートの表示（PDF） - Philips Electronics
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BT151UC Datasheet PDF : 6 Pages
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Philips Semiconductors
Thyristors
Product specification
BT151U series C
15
Ptot
(W)
conduction
angle
(α)
30
30˚
form
factor
(a)
4
4.0
60˚
2.8
10
90˚
2.2
120˚
1.9
180˚
1.57
4
105.5
a = 1.57 Tmb(max)
1.9
(°C)
2.2
112
2.8
5
118.5
α
00
2
4
6
125
8
IT(AV) (A)
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A
dIT/dt limit
100
IT
ITSM
T time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
15
IT(RMS)
(A)
10
104 ˚C
5
0
-50
0
50
100
150
Tmb (°C)
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
ITSM / A
120
100
80
IT
ITSM
T time
Tj initial = 25 C max
60
40
20
01
10
100
1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
25 IT(RMS) / A
20
15
10
5
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 100 ˚C.
VGT(Tj)
1.6 VGT(25 C)
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
April 2004
3
Rev 1.000
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