Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12W; BUW12AW
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Switching times resistive load (see Figs 11 and 12)
ton
turn-on time
BUW12W
BUW12AW
ts
storage time
BUW12W
BUW12AW
tf
fall time
BUW12W
BUW12AW
ICon = 6 A; IBon = −IBoff = 1.2 A −
ICon = 5 A; IBon = −IBoff = 1 A
−
ICon = 6 A; IBon = −IBoff = 1.2 A −
ICon = 5 A; IBon = −IBoff = 1 A
−
ICon = 6 A; IBon = −IBoff = 1.2 A −
ICon = 5 A; IBon = −IBoff = 1 A
−
Switching times inductive load (see Figs 13 and 14)
ts
storage time
BUW12W
BUW12AW
tf
fall time
BUW12W
BUW12AW
ICon = 6 A; IB = 1.2 A
−
ICon = 6 A; IB = 1.2 A;
−
Tj = 100 °C
ICon = 5 A; IB = 1 A
−
ICon = 5 A; IB = 1 A; Tj = 100 °C −
ICon = 6 A; IB = 1.2 A
−
ICon = 6 A; IB = 1.2 A;
−
Tj = 100 °C
ICon = 5 A; IB = 1 A
−
ICon = 5 A; IB = 1 A; Tj = 100 °C −
Note
1. Measured with a half-sinewave voltage (curve tracer).
−
1
µs
−
1
µs
−
4
µs
−
4
µs
−
0.8
µs
−
0.8
µs
1.6
2.1
µs
1.8
2.3
µs
1.6
2.1
µs
1.8
2.3
µs
80
150 ns
140 300 ns
80
150 ns
140 300 ns
1997 Aug 14
3