BUV41 データシートの表示（PDF） - Inchange Semiconductor
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BUV41 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV41
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.15A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.6A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB=B 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6A ;IB= 0.6A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB=B 1A
VCE= 300V;RBE= 10Ω
VCE= 300V;RBE= 10Ω;TC=100℃
VCE= 300V;VBE= -1.5V
VCE= 300V;VBE= -1.5V;TC=100℃
VEB= 5V; IC= 0
0.8
V
0.9
V
1.2
V
1.6
V
1.8
V
0.5
2.5
mA
0.5
2.5
mA
1.0 mA
Switching Times, Resistive Load
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 8A; IB1= 1A; VCC= 160V;
RB2= 2.5Ω; VBB= -5V, tp= 30μs
0.5 μs
1.2 μs
0.3 μs
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