SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4 A
VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=0.7A
VBEsat
Base-emitter saturation voltage
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A; IB=0.7A
VCE =300V;VBE = -1.5 V
TC=125
VEB=5V; IC=0
Product Specification
BUV27A
MIN TYP. MAX UNIT
150
V
7
30
V
0.7
V
1.5
V
2
V
1
mA
1
mA
2