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BUZ61 データシートの表示(PDF) - Siemens AG
部品番号
コンポーネント説明
メーカー
BUZ61
SIPMOS ® Power Transistor
Siemens AG
BUZ61 Datasheet PDF : 9 Pages
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9
BUZ 61
Typ. output characteristics
I
D
=
ƒ(
V
DS
)
parameter:
t
p
= 80 µs
l
28
P
tot
= 150W
A
kj i h
g
f
24
I
D
22
20
18
16
14
12
10
8
6
e
V
GS [V]
a 4.0
b 4.5
c 5.0
d
d 5.5
e 6.0
f 6.5
g 7.0
c
h 7.5
i 8.0
j 9.0
k 10.0
b
l 20.0
4
2
a
0
0 4 8 12 16 20 24 V 30
V
DS
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥
2 x
I
D
x
R
DS(on)max
16
A
I
D
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V
GS
Typ. drain-source on-resistance
R
DS (on)
=
ƒ(
I
D
)
parameter:
V
GS
1.3
Ω
a
1.1
R
DS (on)
1.0
b
c
d
0.9
0.8
0.7
0.6
e
0.5
f
g
h
0.4
ij
k
0.3
0.2
V
GS
[V] =
0.1
abc def
4.05 5.0 5.5 6.0 6.5 7.0
0.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0
4
8 12 16 20 A 28
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
14
S
12
g
fs
11
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 A 15
I
D
Semiconductor Group
6
07/96
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