BUZ73ALH データシートの表示（PDF） - Infineon Technologies

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BUZ73ALH

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 73AL H

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

min.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 200 V, VGS = 0 V, Tj = 25 ˚C

VDS = 200 V, VGS = 0 V, Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 5 V, ID = 3.5 A

V(BR)DSS

200

VGS(th)

1.2

IDSS

-

-

IGSS

-

RDS(on)

-

Values

typ.

max.

-

-

1.6

2

0.1

1

10

100

10

100

0.5

0.6

Unit

V

µA

nA

Ω

Rev. 2.4

Page 2

2009-11-10

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