BYT28-400-E3/45 データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
BYT28-400-E3/45 Datasheet PDF : 5 Pages
| |||
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
15
Resistive or Inductive Load
10
5
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
1000
100
10
TJ = 125 °C
TJ = 100 °C
1.0
TJ = 25 °C
0.1
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
TC = 105 °C
8.3 ms Single Half Sine-Wave
10
1
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
Pulse Width = 300 µs
1 % Duty Cycle
10
1.0 TJ = 125 °C
0.1
TJ = 100 °C
TJ = 25 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
120
100
at 5 A, 50 A/µs
80
at 2 A, 20 A/µs
60
at 5 A, 50 A/µs
at 1 A, 100 A/µs
40
20
0
25
at 2 A, 20 A/µs
50
75
100
Junction Temperature (°C)
trr
Qrr
125
Figure 5. Reverse Switching Characteristics Per Diode
100
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88552 For technical questions within your region, please contact one of the following:
Revision: 06-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Share Link: 