BSP255 データシートの表示（PDF） - Philips Electronics
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BSP255 Datasheet PDF : 10 Pages
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Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSP255
handbook1, h.4alfpage
k
1.2
MBH438
1.0
0.8
0.6
−75
−25
25
75
125
175
Tj (°C)
k = -V----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
VGSth at VDS =VGS ; ID = −1 mA.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of
junction temperature; typical values.
handbook2, .h4alfpage
k
2.0
1.6
MBH439
(1)
(2)
1.2
0.8
0.4
−75
−25
25
75
125
175
Tj (°C)
k = R-----D-R---S-D--o--S-n--o--a-n---t--a-2--t-5---T---°-j--C---
(1) VGS = −4.5 V; ID = −80 mA.
(2) VGS = −2.8 V; ID = −50 mA.
Fig.13 Temperature coefficient of drain-source
on-state resistance as a function of
junction temperature; typical values.
1996 Aug 05
8
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