CNA1014H データシートの表示（PDF） - Panasonic Corporation
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CNA1014H Datasheet PDF : 3 Pages
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Transmissive Photosensors (Photo lnterrupters)
CNA1014H (ON1387)
Photo Interrupter
For contactless SW, object detection
Unit: mm
■ Overview
CNA1014H is a transmittive photosensor series in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
■ Features
• Highly precise position detection: 0.3 mm
• With attachment positioning boss
• Fast response: tr , tf = 5 µs (typ.)
■ Adsolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
VR
3
V
emitting diode) Forward current
IF
50
mA
Power dissipation *1
PD
75
mW
Output (Photo Collector-emitter voltage VCEO
30
V
transistor) (Base open)
12.0
3.0±0.1
A
Device
Center
5.0
0.5±0.1
(C1)
A' 4-0.45±0.15
30°
(7.6)
2
3
1.23
4-0.45±0.15
(2.54)
SEC. A-A'
φ1.5±0.05
(φ2)
1
4
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-025 Package
(Note) 1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
Emitter-collector voltage VECO
5
V
(Base open)
Collector current
IC
20
mA
Collector power dissipation *2 PC
100
mW
Temperature Operating ambient temperature Topr −25 to +85 °C
Storage temperature
Tstg −40 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input
Forward voltage
VF
characteristics Reverse current
IR
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Transfer Collector current
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time *
tr
Fall time *
tf
IF = 20 mA
VR = 3 V
VCE = 10 V
VCE = 5 V, IF = 20 mA
IF = 40 mA, IC = 1 mA
VCC = 5 V, IC = 1 mA
RL = 100 Ω
1.25 1.40 V
10 µA
10 200 nA
1.5
12.0 mA
0.4 V
5
µs
5
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
50 Ω
Sig. out (Output pulse)
RL
tr : Rise time
90% tf : Fall time
10%
tr
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SHG00059BED
1
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