CY7C1325G-133BGI データシートの表示（PDF） - Cypress Semiconductor
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CY7C1325G-133BGI Datasheet PDF : 16 Pages
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CY7C1325G
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to VDDQ + 0.5V
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature]
Commercial 0°C to +70°C
Industrial –40°C to +85°C
VDD
3.3V −5%/+10%
VDDQ
2.5V –5%
to VDD
Electrical Characteristics Over the Operating Range [7, 8]
Parameter
Description
Test Conditions
VDD
VDDQ
VOH
VOL
VIH
VIL
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage[7]
for 3.3V I/O, IOH = –4.0 mA
for 2.5V I/O, IOH = –1.0 mA
for 3.3V I/O, IOL = 8.0 mA
for 2.5V I/O, IOL = 1.0 mA
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
IX
Input Leakage Current GND ≤ VI ≤ VDDQ
except ZZ and MODE
Input Current of MODE Input = VSS
Input = VDD
Input Current of ZZ
Input = VSS
Input = VDD
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply VDD = Max., IOUT = 0 mA,
7.5-ns cycle, 133 MHz
Current
f = fMAX= 1/tCYC
10-ns cycle, 100 MHz
ISB1
Automatic CE
Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz
Power-Down
Current—TTL Inputs
VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
inputs switching
10-ns cycle, 100 MHz
ISB2
Automatic CE
Max. VDD, Device Deselected, All speeds
Power-Down
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
Current—CMOS Inputs f = 0, inputs static
ISB3
Automatic CE
Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz
Power-down
VIN ≥ VDDQ – 0.3V or
Current—CMOS Inputs VIN ≤ 0.3V,
10-ns cycle, 100 MHz
f = fMAX, inputs switching
ISB4
Automatic CE
Max. VDD, Device Deselected, All speeds
Power-down
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
Current—TTL Inputs f = 0, inputs static
Min.
3.135
2.375
2.4
2.0
2.0
1.7
–0.3
–0.3
−5
–30
–5
–5
Max. Unit
3.6
V
VDD
V
V
V
0.4
V
0.4
V
VDD + 0.3V V
VDD + 0.3V V
0.8
V
0.7
V
5
µA
µA
5
µA
µA
30
µA
5
µA
225 mA
205 mA
90
mA
80
mA
40
mA
75
mA
65
mA
45
mA
Notes:
7. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
8. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05518 Rev. *D
Page 7 of 16
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