D44TD4 データシートの表示（PDF） - Inchange Semiconductor
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D44TD4 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- D44TD3
= 350V(Min)- D44TD4
= 400V(Min)- D44TD5
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for switching regulators, high resolution deflection
circuits, inverters and motor drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter
Voltage
D44TD3
400
D44TD4
500
V
D44TD5
600
VCEO
Collector-Emitter
Voltage
D44TD3
300
D44TD4
350
V
D44TD5
400
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
50
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 ℃/W
isc Product Specification
D44TD3/4/5
isc Website：www.iscsemi.cn
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