DTC114TSA(Rev_A) データシートの表示（PDF） - ROHM Semiconductor

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DTC114TSA
(Rev.:Rev_A)

Digital transistors (built-in resistor)

ROHM Semiconductor 

Transistors

DTC114TM / DTC114TE / DTC114TUA

DTC114TKA / DTC114TSA

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Limits(DTA114T )

Symbol

Unit

M E UA KA SA

VCBO

50

V

VCEO

50

V

VEBO

5

V

IC

100

mA

PC

150

200

300 mW

Tj

150

°C

Tstg

−55 to +150

°C

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

∗ Transition frequency of the device

Symbol Min. Typ. Max. Unit

Conditions

BVCBO

50

−

−

V IC=50µA

BVCEO

50

−

−

V IC=1mA

BVEBO

5

−

−

V IE=50µA

ICBO

−

−

0.5 µA VCB=50V

IEBO

−

−

0.5 µA VEB=4V

VCE(sat)

−

−

0.3

V IC/IB=10mA/1mA

hFE

100 250 600

− VCE=5V, IC=1mA

R1

7

10

13

kΩ

−

fT

−

250

−

MHz VCE=10V, IE=−5mA, f=100MHz

∗

zPackaging specifications

Package

Package type

Code

VMT3

Taping

T2L

Type

Basic ordering

unit (pieces)

8000

DTC114TM

DTC114TE

−

DTC114TUA

−

DTC114TKA

−

DTC114TSA

−

EMT3

Taping

TL

3000

−

−

−

−

UMT3

Taping

T106

3000

−

−

−

−

SMT3

Taping

T146

3000

−

−

−

−

SPT

Taping

TP

5000

−

−

−

−

Rev.A

2/3

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