EDS5104ABTA データシートの表示（PDF） - Elpida Memory, Inc

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EDS5104ABTA

512M bits SDRAM / 54-pin TSOP

Elpida Memory, Inc 

EDS5104ABTA, EDS5108ABTA, EDS5116ABTA

DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)

Parameter

max.

/CAS latency

Symbol

Grade × 4

×8

× 16

Unit

Test condition

Notes

Operating current

ICC1

-6B,-7A 160

165

175

-75

140

145

155

mA

Burst length = 1

tRC = tRC (min.)

1, 2, 3

Standby current in power

down

ICC2P

3

3

3

mA

CKE = VIL,

tCK = tCK (min.)

6

Standby current in power

down (input signal stable)

ICC2PS

2

2

2

mA

CKE = VIL, tCK = ∞ 7

Standby current in non

power down

ICC2N

-6B

30

-7A, -75 25

30

25

30

25

mA

CKE, /CS = VIH,

tCK = tCK (min.)

4

Standby current in non

power down (input signal ICC2NS

stable)

9

9

9

mA

CKE = VIH, tCK = ∞,

/CS = VIH

8

Active standby current in

power down

ICC3P

4

4

4

mA

CKE = VIL,

tCK = tCK (min.)

1, 2, 6

Active standby current in

power down (input signal ICC3PS

stable)

3

3

3

mA

CKE = VIL, tCK = ∞ 2, 7

Active standby current in

non power down

ICC3N

-6B

45

-7A, -75 40

45

40

45

40

mA

CKE, /CS = VIH,

tCK = tCK (min.)

1, 2, 4

Active standby current in

non power down (input

signal stable)

ICC3NS

20

20

20

mA

CKE = VIH, tCK = ∞,

/CS = VIH

2, 8

Burst operating current ICC4

-6B

160

170

190

-7A, -75 130

140

160

mA

tCK = tCK (min.), BL = 4 1, 2, 5

Refresh current

Self refresh current

ICC5

ICC6

-6B,-7A 320

320

320

-75

280

280

280

4

4

4

mA

tRC = tRC (min.)

3

mA

VIH ≥ VDD – 0.2V

VIL ≤ 0.2V

Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output

open condition.

2. One bank operation.

3. Input signals are changed once per one clock.

4. Input signals are changed once per two clocks.

5. Input signals are changed once per four clocks.

6. After power down mode, CLK operating current.

7. After power down mode, no CLK operating current.

8. Input signals are VIH or VIL fixed.

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)

Parameter

Input leakage current

Output leakage current

Output high voltage

Output low voltage

Symbol min.

ILI

–1

ILO

–1.5

VOH

2.4

VOL

—

max.

1

1.5

—

0.4

Unit Test condition

Notes

µA 0 ≤ VIN ≤ VDD

µA 0 ≤ VOUT ≤ VDD, DQ = disable

V

IOH = –4 mA

V

IOL = 4 mA

Preliminary Data Sheet E0250E10 (Ver. 1.0)

5

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