GA100TS120UPBF データシートの表示（PDF） - Vishay Semiconductors

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GA100TS120UPBF

"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A

Vishay Semiconductors 

GA100TS120UPbF

"Half-Bridge" IGBT INT-A-PAK Vishay High Power Products

(Ultrafast Speed IGBT), 100 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Thermal resistance, junction to case

IGBT

Diode

RthJC

Thermal resistance, case to sink per module

Mounting torque

case to heatsink

case to terminal 1, 2 and 3

RthCS

For screws M5 x 0.8

Weight of module

TYP.

-

-

0.1

-

-

200

MAX.

0.24

0.35

-

4.0

3.0

-

UNITS

°C/W

Nm

g

100

75

Square wave:

50

60 % of rated

voltage

25

0

0.1

Ideal diodes

1000

VGE = 15 V

500 µs pulse width

100

125 °C

10

25 °C

Duty cycle: 50 %

TJ = 125 °C

Tsink = 90 °C

Gate drive as specified

Power dissipation = 170 W

1

10

100

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of Fundamental)

1000

VGE = 20 V

500 µs pulse width

100

125 °C

25 °C

10

1

0.5

1.0

1.5

2.0

2.5

3.0

VCE - Collector to Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

1

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

Document Number: 94428

Revision: 04-May-10

For technical questions, contact: indmodules@vishay.com

www.vishay.com

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