GA300TD60S(2011) データシートの表示（PDF） - Vishay Semiconductors

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GA300TD60S
(Rev.:2011)

Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A

Vishay Semiconductors 

GA300TD60S

Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

22

20

18

16

14

12

TJ = 125 °C

10

8

6

4

TJ = 25 °C

2

0

100 200 300 400 500 600 700 800 900 1000

93362_17

dIF/dt (A/μs)

Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt,

VCC = 400 V, IF = 300 A

1

0.1

D = 0.50

0.01

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

DC

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

93362_18

t1 - Rectangular Pulse Duration (s)

Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)

1

0.1

D = 0.50

D = 0.20

D = 0.10

D = 0.05

0.01

D = 0.02

D = 0.01

DC

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

93362_19

t1 - Rectangular Pulse Duration (s)

Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode)

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Document Number: 93362

Revision: 31-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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