H11G1SVM データシートの表示（PDF） - Fairchild Semiconductor

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H11G1SVM

High Voltage Photodarlington Optocouplers

Fairchild Semiconductor 

H11G1M, H11G2M, H11G3M

High Voltage Photodarlington Optocouplers

May 2007

tm

Features

■ High BVCEO

– Minimum 100V for H11G1M

– Minimum 80V for H11G2M

– Minimum 55V for H11G3M

■ High sensitivity to low input current

(Min. 500% CTR at IF = 1mA)

■ Low leakage current at elevated temperature

(Max. 100µA at 80°C)

■ Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

Applications

■ CMOS logic interface

■ Telephone ring detector

■ Low input TTL interface

■ Power supply isolation

■ Replace pulse transformer

General Description

The H11GXM series are photodarlington-type optically

coupled optocouplers. These devices have a gallium

arsenide infrared emitting diode coupled with a silicon

darlington connected phototransistor which has an inte-

gral base-emitter resistor to optimize elevated tempera-

ture characteristics.

Schematic

ANODE 1

CATHODE 2

N/C 3

6 BASE

5 COLLECTOR

4 EMITTER

©2007 Fairchild Semiconductor Corporation

H11GXM Rev. 1.0.0

www.fairchildsemi.com

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