H5DU2562GFR-E3I データシートの表示（PDF） - Hynix Semiconductor

部品番号

コンポーネント説明

メーカー

H5DU2562GFR-E3I

256Mb DDR SDRAM

Hynix Semiconductor 

H5DU2562GFR-xxI

AC OPERATING CONDITIONS (TA=-40 to 85 oC, Voltage referenced to VSS = 0V)

Parameter

Input High (Logic 1) Voltage, DQ, DQS and DM signals

Input Low (Logic 0) Voltage, DQ, DQS and DM signals

Input Differential Voltage, CK and /CK inputs1

Input Crossing Point Voltage, CK and /CK inputs2

Symbol

VIH(AC)

VIL(AC)

VID(AC)

VIX(AC)

Min

VREF + 0.31

-

0.7

0.5*VDDQ-0.2

Max

-

VREF - 0.31

VDDQ + 0.6

0.5*VDDQ+0.2

Unit

V

V

V

V

Note:

1. VID is the magnitude of the difference between the input level on CK and the input on /CK.

2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.

*For more information about AC Overshoot/Undershoot Specifications, refer to “Device Operation” section in hynix website.

AC OPERATING TEST CONDITIONS (TA=-40 to 85oC, Voltage referenced to VSS = 0V)

Parameter

Reference Voltage

Termination Voltage

AC Input High Level Voltage (VIH, min)

AC Input Low Level Voltage (VIL, max)

Input Timing Measurement Reference Level Voltage

Output Timing Measurement Reference Level Voltage

Input Signal maximum peak swing

Input minimum Signal Slew Rate

Termination Resistor (RT)

Series Resistor (RS)

Output Load Capacitance for Access Time Measurement (CL)

Value

VDDQ x 0.5

VDDQ x 0.5

VREF + 0.31

VREF - 0.31

VREF

VTT

1.5

1

50

25

30

Unit

V

V

V

V

V

V

V

V/ns

Ω

W

pF

Rev. 1.1 /Sep. 2007

19

Share Link: