DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HAF2027L データシートの表示(PDF) - Renesas Electronics

部品番号
コンポーネント説明
メーカー
HAF2027L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HAF2027(L), HAF2027(S)
Electrical Characteristics
Item
Symbol Min
Typ
Max
Unit
Drain current
ID1
80
A
ID2
15
A
ID3
10
mA
Drain to source breakdown
V(BR)DSS
60
V
voltage
Gate to source breakdown
V(BR)GSS
16
V
voltage
V(BR)GSS
–2.5
V
Gate to source leak current
IGSS1
100
µA
IGSS2
50
µA
IGSS3
1
µA
IGSS4
–100
µA
Input current (shut down)
IGS(OP)1
0.6
mA
Zero gate voltage drain
current
IGS(OP)2
0.35
mA
IDSS
10
µA
Gate to source cut off voltage VGS(off)
1.0
2.25
V
Forward transfer admittance
|yfs|
15
65
S
Static drain to source on state RDS(on)
7.7
10
m
resistance
RDS(on)
10.3
15
m
Output capacitance
Coss
1423
pF
Turn-on delay time
Rise time
Turn off delay time
Fall time
td(on)
10
µs
tr
48
µs
td(off)
22
µs
tf
23
µs
Body-drain diode forward
voltage
VDF
0.9
V
Body-drain diode reverse
recovery time
trr
102
ns
Over load shut down
operation time Note4
tos1
0.7
ms
tos2
0.43
ms
Notes: 3. Pulse test
4. Including the junction temperature rise of the over lorded condition.
(Ta = 25°C)
Test Conditions
VGS = 6 V, VDS = 10 V Note3
VGS = 3.5 V, VDS = 10 V Note3
VGS = 1.2 V, VDS = 10 V Note3
ID = 10 mA, VGS = 0
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 6 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 6 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 25 A, VDS = 10 V Note3
ID = 25 A, VGS = 10 V Note3
ID = 25 A, VGS = 4 V Note3
VDS = 10 V, VGS = 0, f = 1MHz
VGS = 10 V, ID= 25 A, RL = 1.2
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0, diF/dt = 100 A/µs
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
REJ03G1674-0100 Rev.1.00 May 21, 2008
Page 3 of 8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]