LTC1433C データシートの表示（PDF） - Linear Technology
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LTC1433C Datasheet PDF : 20 Pages
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LTC1433/LTC1434
ELECTRICAL CHARACTERISTICS TA = 25°C, VIN = 10V, VRUN/SS = 5V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
IPROG
VPROG Input Current
Main Control Loop
0.5V > VPROG
VIN – 0.5V < VPROG < VIN
–4
– 10
µA
4
10
µA
IQ
Input DC Supply Current
(Note 6)
Normal Mode
3.6V < VIN < 13V
Shutdown, Reference Alive
VRUN/SS = 0V, 3.6V < VIN < 13V, LBI > 0.9V
Complete Shutdown
VRUN/SS = 0V, 3.6V < VIN < 13V, LBI ≤ 0.48V
470
µA
35
70
µA
15
30
µA
VRUN/SS
RUN/SS Threshold
q
0.8
1.3
2
V
IRUN/SS
Soft Start Current Source
VRUN/SS = 0V
1.2
3
4.5
µA
Oscillator and Phase-Locked Loop
fOSC
RPLLIN
IPLL LPF
Oscillator Frequency
VCO High
PLL Input Resistance
Phase Detector Output Current
Sinking Capability
Sourcing Capability
Power-On Reset
COSC = 100pF (Note 7)
VPLL LPF = 2.4V
fPLLIN < fOSC
fPLLIN > fOSC
112
125
142
kHz
200
240
kHz
50
kΩ
10
15
20
µA
10
15
20
µA
VSATPOR POR Saturation Voltage
IPOR = 1.6mA, VOSENSE = 1V, VPROG Open
0.6
1.0
V
ILPOR
POR Leakage
VPOR = 10V, VOSENSE = 1.2V, VPROG Open
0.2
1.0
µA
VTRPOR
POR Trip Voltage from Regulated VPROG Pin Open, VOSENSE Ramping Negative
– 11
– 7.5
–4
%
Output
tDPOR
POR Delay
Low-Battery Comparator
VPROG Pin Open
65536
Cycles
VSATLBO
LBO Saturation Voltage
ILLBO
LBO Leakage
VTRLBI
LBI Trip Voltage
VHYSTLB
Low-Battery Comparator Hysteresis
VSDLB
Low-Battery Shutdown Trip Point
IINLBI
LBI Input Current
P-Channel Power FETs Characteristics
ILBO = 1.6mA, VLBI = 1.1V
VLBO = 10V, VLBI = 1.4V
High to Low Transition on LBO
VLBI = 1.19V
0.6
1.0
V
0.01
1.0
µA
1.16
1.19
1.22
V
40
mV
0.74
V
1
50
nA
RSMFET
RBIGFET
ILSSW
ILBSW
RDS(ON) of Small FET
RDS(ON) of Big FET
Small FET Leakage
Big FET Leakage
ISSW = 15mA
IBSW = 150mA
VRUN/SS = 0V
VRUN/SS = 0V
3.3
4.1
Ω
0.8
1.2
Ω
q
7
1000
nA
q
5
1000
nA
The q denotes specifications which apply over the specified temperature
range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: C-grade device specifications are guaranteed over the 0°C to 70°C
temperature range. In addition, C-grade device specifications are assured
over the – 40°C to 85°C temperature range by design or correlation, but
are not production tested.
Note 3: I-grade device specifications are guaranteed over the – 40°C to
85°C temperature range by design, testing or correlation.
Note 4: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
LTC1433/LTC1434: TJ = TA + (PD)(150°C/W)
Note 5: The LTC1433/LTC1434 are tested in a feedback loop which servos
VOSENSE to the feedback point for the error amplifier (VITH = 1.19V).
Note 6: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 7: Oscillator frequency is tested by measuring the COSC charge and
discharge currents and applying the formula:
( ) ( ) fOSC (kHz) =
8.4(108)
COSC (pF) + 11
1 + 1 –1
ICHG IDIS
3
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