IRF7207 データシートの表示（PDF） - International Rectifier

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IRF7207

HEXFET® Power MOSFET

International Rectifier 

IRF7207

100

TOP

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

BOTTOM -2.25V

10

-2.25V

 20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

TOP

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

BOTTOM -2.25V

10

-2.25V

 20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 25 °C

 TJ = 150°C

10

 V DS= -10V

20µs PULSE WIDTH

1

2.0

3.0

4.0

5.0

6.0

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0  ID = -5.4A

1.5

1.0

0.5

 VGS = -41.05V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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