IRHM7C50SE データシートの表示（PDF） - International Rectifier
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IRHM7C50SE Datasheet PDF : 4 Pages
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Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Min
600
—
—
—
2.5
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
——
V
0.45 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.60
— 0.65 Ω
VGS = 12V, ID =6.5A
VGS = 12V, ID = 10.4A
— 4.5 V
VDS = VGS, ID = 1.0mA
— — S( )
VDS > 15V, IDS = 6.5A
—
—
50
250
µA
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100
— -100 nA
VGS = 20V
VGS = -20V
— 150
VGS =12V, ID = 10.4A
— 30 nC
VDS = Max Rating x 0.5
— 75
— 55
— 190
— 210 ns
VDD = 300V, ID = 10.4A,
RG = 2.35Ω
— 130
8.7 —
8.7 —
Measured from drain lead, Modified MOSFET symbol show-
6mm (0.25 in) from package ing the internal inductances.
nH to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 2700 —
— 300 — pF
— 61 —
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
— — 10.4
— — 41.6
A Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.62 V Tj = 25°C, IS = 10.4A, VGS = 0V
— — 1200 ns Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/µs
— — 16 µC
VDD ≤ 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
— — 0.83
— — 48
— 0.21 —
K/W
To Order
Test Conditions
Typical socket mount
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