IS42S16800A-7TI データシートの表示（PDF） - Integrated Silicon Solution
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IS42S16800A-7TI Datasheet PDF : 61 Pages
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IS42S81600A, IS42S16800A, IS42S32400A
ISSI ®
AC ELECTRICAL CHARACTERISTICS (1,2,3)
-6
-7
-10
Symbol Parameter
Min.
Max. Min.
Max. Min.
Max Units
tCK3
Clock Cycle Time
tCK2
CAS Latency = 3
CAS Latency = 2
tAC3
Access Time From CLK(4) CAS Latency = 3
tAC2
CAS Latency = 2
6
—
7
—
10 —
ns
——
10
—
10
—
ns
— 5.4
— 5.4
—7
ns
——
—6
—9
ns
tCHI
CLK HIGH Level Width
2.5 —
2.5 —
3.5 —
ns
tCL
CLK LOW Level Width
2.5 —
2.5 —
3.5 —
ns
tOH3
Output Data Hold Time
CAS Latency = 3
tOH2
CAS Latency = 2
2.5 —
2.5 —
2.5 —
ns
2.5 —
2.5 —
2.5 —
ns
tLZ
Output LOW Impedance Time
0
—
0
—
0
—
ns
tHZ3
Output HIGH Impedance Time(5)CAS Latency = 3
tHZ2
CAS Latency = 2
—
6
—
6
—
7
ns
—
6
—
6
—
9
ns
tDS
Input Data Setup Time(2,3)
1.5 —
1.5 —
2.0 —
ns
tDH
Input Data Hold Time(2,3)
0.8 —
0.8 —
1
—
ns
tAS
Address Setup Time(2,3)
1.5 —
1.5 —
2.0 —
ns
tAH
Address Hold Time(2,3)
0.8 —
0.8 —
1
—
ns
tCKS
CKE Setup Time(2,3)
1.5 —
1.5 —
2.0 —
ns
tCKH
CKE Hold Time(2,3)
0.8 —
0.8 —
1
—
ns
tCKA
CKE to CLK Recovery Delay Time
1CLK+3 —
1CLK+3 —
1CLK+3 —
ns
tCS
Command Setup Time (CS, RAS, CAS, WE, DQM)(2,3)
1.5 —
1.5 —
2.0 —
ns
tCH
Command Hold Time (CS, RAS, CAS, WE, DQM)(2,3)
0.8 —
0.8 —
1
—
ns
tRC
Command Period (REF to REF / ACT to ACT)
60 —
63 —
70 —
ns
tRAS
Command Period (ACT to PRE)
37 120,000
37 120,000
44 120,000
ns
tRP
Command Period (PRE to ACT)
18 —
18 —
20 —
ns
tRCD
Active Command To Read / Write Command Delay Time 18
—
18 —
20 —
ns
tRRD
Command Period (ACT [0] to ACT[1])
tDPL3 Input Data To Precharge
CAS Latency = 3
Command Delay time
tDPL2
CAS Latency = 2
12 —
14 —
15 —
ns
2CLK —
2CLK —
2CLK —
ns
2CLK —
2CLK —
2CLK —
ns
tDAL3 Input Data To Active / Refresh CAS Latency = 3
Command Delay time (During Auto-Precharge)
tDAL2
CAS Latency = 2
2CLK+tRP —
2CLK+tRP —
2CLK+tRP —
ns
2CLK+tRP —
2CLK+tRP —
2CLK+tRP —
ns
tT
Transition Time
0.5 30
0.5 30
0.5 30
ns
tREF
Refresh Cycle Time (4096)
— 64
— 64
— 64
ms
Notes:
1. When power is first applied, memory operation should be started 100 µs after VDD and VDDQ reach their stipulated voltages.
Also note that the power-on sequence must be executed before starting memory operation.
2. Measured with tT = 1 ns. If clock rising time is longer than 1ns, (tR /2 - 0.5) ns should be added to the parameter.
3. Assumed input rise and fall time (tR & tF) = 1ns. If tR and tF are longer than 1ns, transient time compensation should be
considered and (tR + tF) / 2-1 ns should be added to the parameter.
4. Access time is measured at 1.5V with the load shown in the figure below.
5. The time tHZ (max.) is defined as the time required for the output voltage to transition by ± 200 mV from VOH (min.) or VOL (max.)
when the output is in the high impedance state.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
17
PRELIMINARYINFORMATION Rev. 00C
01/20/05
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