IS93C46A IS93C56A IS93C66A
ISSI ®
DC ELECTRICAL CHARACTERISTICS
TA = –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
Vcc
VOL
Output LOW Voltage IOL = 100 µA
2.5V to 5.5V
VOL1
Output LOW Voltage IOL = 2.1 mA
4.5V to 5.5V
VOH
Output HIGH Voltage IOH = –100 µA
2.5V to 5.5V
VOH1
Output HIGH Voltage IOH = –400 µA
4.5V to 5.5V
VIH
Input HIGH Voltage
2.5V to 5.5V
4.5V to 5.5V
VIL
Input LOW Voltage
2.5V to 5.5V
4.5V to 5.5V
ILI
Input Leakage
VIN = 0V to VCC (CS, SK,DIN,ORG)
ILO
Output Leakage
VOUT = 0V to VCC, CS = 0V
Notes:
Automotive grade devices in this table are tested with Vcc = 2.7V to 5.5V and 4.5V to 5.5V.
Min.
—
—
VCC – 0.2
2.4
0.7XVCC
0.7XVCC
–0.3
–0.3
0
0
Max.
0.2
0.4
—
—
VCC+1
VCC+1
0.2XVCC
0.8
2.5
2.5
Unit
V
V
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS
TA = –40°C to +85°C for Industrial
Symbol
ICC1
ICC2
ISB
Parameter
Vcc Read Supply Current
Vcc Write Supply Current
Standby Current
Test Conditions
CS = VIH, SK = 1 MHz
CMOS input levels
CS = VIH, SK = 1 MHz
CMOS input levels
CS = VIH, SK = 0V
Vcc
Min. Typ. Max.
Unit
2.7V
— 40 100
µA
5.0V
— 100 500
µA
2.7V
— 0.4 1
mA
5.0V
— 1.5 3
mA
2.7V
— 0.4 2
µA
5.0V
—2
4
µA
POWER SUPPLY CHARACTERISTICS
TA = –40°C to +125°C for Automotive
Symbol
ICC1
ICC2
ISB
Parameter
Vcc Read Supply Current
Vcc Write Supply Current
Standby Current
Test Conditions
CS = VIH, SK = 1 MHz
CMOS input levels
CS = VIH, SK = 1 MHz
CMOS input levels
CS = VIH, SK = 0V
Vcc
Min. Typ. Max.
Unit
2.7V
— 40 100
µA
5.0V
— 100 500
µA
2.7V
— 0.4 1
mA
5.0V
— 1.5 3
mA
2.7V
— 0.5 3
µA
5.0V
—4
8
µA
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
11/12/02