KSC2500 データシートの表示（PDF） - Fairchild Semiconductor

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KSC2500

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC2500

Medium Power Amplifier & Low Saturation

1

TO-92L

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCES

Collector-Emitter Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

* Collector Current (Pulse)

IB

Base Current

PC

Collector Power Dissipation

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤30%

Ratings

30

30

10

6

2

5

0.5

900

150

-55 ~ 150

Units

V

V

V

V

A

A

A

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

IEBO

BVCBO

BVEBO

hFE 1

hFE 2

VCE (sat)

VBE (on)

fT

Cob

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

VCB=30V, IE=0

VEB=6V, IC=0

IC=10mA, IB=0

IE=1mA, IC=0

VCE=1V, IC=0.5A

VCE=1V, IC=2A

IC=2A, IB=50mA

VCE=1V, IC=2A

VCE=1V, IC=0.5A

VCB=10V, IE=0, f=1MHz

Min.

10

6

140

70

Typ.

200

0.2

0.86

150

27

Max.

100

100

600

Units

nA

nA

V

V

0.5

V

1.5

V

MHz

pF

hFE1 Classification

Classification

hFE1

A

140 ~ 240

B

200 ~ 330

C

300 ~ 450

D

420 ~ 600

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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