Thermal Characteristics
VP2450
Package
TO-92
ID (continuous)*
-0.1A
ID (pulsed)
-0.3A
Power Dissipation
@ TC = 25°C
1W
θjc
°C/W
125
TO-243AA
-0.16A
-0.80A
1.6W†
15
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θja
°C/W
170
78
IDR*
-0.1A
-0.16A
IDRM
-0.3A
-0.80A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
Min Typ Max Unit
-500
V
Conditions
VGS = 0V, ID = -250µA
VGS(th)
Gate Threshold Voltage
-1.5
∆VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
-3.5
-4.8
-100
-10
-1
V
mV/°C
nA
µA
mA
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
-75
-200
35
30
∆RDS(ON) Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
150 320
CISS
Input Capacitance
190
COSS
Common Source Output Capacitance
75
CRSS
Reverse Transfer Capacitance
20
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
25
td(OFF)
Turn-OFF Delay Time
45
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
-1.8
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Ω
%/°C
m
pF
ns
V
ns
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = -4.5V, VDS = -15V
VGS = -10V, VDS = -15V
VGS = -4.5V, ID = -50mA
VGS = -10V, ID = -100mA
VGS = -10V, ID = -100mA
VDS = -15V, ID = -100mA
VGS = 0V, VDS =- 25V
f = 1 MHz
VDD = -25V
ID = -200mA
RGEN = 25Ω
VGS = 0V, ISD = -100mA
VGS = 0V, ISD = -100mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
2
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD