DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

LTC4085EDE-3 データシートの表示(PDF) - Linear Technology

部品番号
コンポーネント説明
メーカー
LTC4085EDE-3 Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LTC4085-3/LTC4085-4
ELECTRICAL CHARACTERISTICS The indicates specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C (Note 5). VIN = 5V, VBAT = 3.7V, HPWR = 5V, WALL = 0V, RPROG = 100k,
RCLPROG = 2k, unless otherwise noted.
SYMBOL
PARAMETER
External Ideal Diode
VFWD,EDA
Logic
VOL
VIH
VIL
IPULLDN
VCHG(SD)
External Ideal Diode Forward Voltage
Output Low Voltage CHRG, ACPR
Input High Voltage
Input Low Voltage
Logic Input Pull-Down Current
Charger Shutdown Threshold Voltage
on TIMER
ICHG(SD)
Charger Shutdown Pull-Up Current
on TIMER
VWAR
VWAF
VWDR
VWDF
IWALL
NTC
Absolute Wall Input Threshold Voltage
Absolute Wall Input Threshold Voltage
Delta Wall Input Threshold Voltage
Delta Wall Input Threshold Voltage
Wall Input Current
VVNTC
INTC
VNTC Bias Voltage
NTC Input Leakage Current
VCOLD
Cold Temperature Fault Threshold
Voltage
VHOT
Hot Temperature Fault Threshold
Voltage
VDIS
NTC Disable Voltage
CONDITIONS
VGATE = 1.85V; IGATE = 0
ISINK = 5mA
SUSP, HPWR Pin
SUSP, HPWR Pin
SUSP, HPWR
VTIMER = 0V
VWALL Rising Threshold
VWALL Falling Threshold
VWALL – VBAT Rising Threshold
VWALL – VBAT Falling Threshold
VWALL = 5V
IVNTC = 500μA
VNTC = 1V
Rising Threshold
Hysteresis
Falling Threshold
Hysteresis
NTC Input Voltage to GND (Falling)
Hysteresis
MIN TYP MAX UNITS
20
mV
0.1
0.4
V
1.2
V
0.4
V
2
μA
0.14
0.4
V
5
14
μA
4.15 4.25 4.35
V
3.12
V
75
mV
0
25
60
mV
75
150
μA
4.4
4.85
V
0
±1
μA
0.738 • VVNTC
V
0.018 • VVNTC
V
0.326 • VVNTC
V
0.015 • VVNTC
V
75
100
125
mV
35
mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: VCC is the greater of VIN, VOUT or VBAT.
Note 3: All voltage values are with respect to GND.
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperatures will exceed 110°C when overtemperature protection is
active. Continuous operation above the specified maximum operating
junction temperature may result in device degradation or failure.
Note 5: The LTC4085-3/LTC4085-4 is tested under pulsed load conditions
such that TJ ≈ TA. The LTC4085E-3/LTC4085E-4 is guaranteed to meet
specified performance from 0° to 85°C. Specifications over the –40°C to
85°C operating temperature range are assured by design, characterization
and correlation with statistical process controls.
Note 6: Guaranteed by long term current density limitations.
Note 7: Total input current is equal to this specification plus 1.002 • IBAT
where IBAT is the charge current.
Note 8: Accuracy of programmed current may degrade for currents greater
than 1.5A.
408534fb
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]