LX5561LL データシートの表示（PDF） - Microsemi Corporation
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LX5561LL Datasheet PDF : 8 Pages
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LX5561
TM
® InGaAs – E-Mode pHEMT Low Noise Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF Off........................................................................................... 4 V
Drain Current ............................................................................................................ 40 mA
Total Power Dissipation............................................................................................0.15 W
RF Input Power ..................................................................................................... +10 dBm
Operation Ambient Temperature................................................................. -40°C to +85°C
Storage Temperature Range ........................................................................ -65°C to 150°C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure).... 260°C (+0 -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
10 11 12
N/C 9
1 N/C
RF OUT 8
2 RF IN
N/C 7
3 N/C
654
LL PACKAGE
(Bottom View)
RoHS / Pb-free NiPdAu Finish
Name
RF IN
RF OUT
VDD
Pin #
2
8
12
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
RF output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
Supply voltage.
GND
N/C
5
Ground.
1,3,4,6,7,9,
10,11,
Center
Metal
Not Connected. They can be treated either as open pins or connected to ground.
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
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