MT55L512V18PT-7.5IT データシートの表示（PDF） - Micron Technology
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MT55L512V18PT-7.5IT Datasheet PDF : 30 Pages
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8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
FBGA PIN DESCRIPTIONS
x18
x32/x36
6R
6R
6P
6P
2A, 9A, 10A, 2A, 9A, 10A,
11A, 2B, 10B, 2B, 10B,
3P, 4P, 8P, 3P, 4P, 8P,
9P, 10P, 3R, 9P, 10P, 3R,
4R, 8R, 9R, 4R, 8R, 9R,
10R, 11R
10R, 11R
5B
5B
4A
5A
–
4A
–
4B
7A
7A
7B
7B
6B
6B
3A
3A
6A
6A
11H
11H
3B
3B
SYMBOL
SA0
SA1
SA
BWa#
BWb#
BWc#
BWd#
CKE#
R/W#
CLK
CE#
CE2#
ZZ
CE2
TYPE
Input
Input
Input
Input
Input
Input
Input
Input
Input
DESCRIPTION
Synchronous Address Inputs: These inputs are registered and
must meet the setup and hold times around the rising edge of
CLK.
Synchronous Byte Write Enables: These active LOW inputs allow
individual bytes to be written and must meet the setup and hold
times around the rising edge of CLK. A byte write enable is LOW
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa’s and DQPa; BWb# controls DQb’s and DQPb.
For the x32 and x36 versions, BWa# controls DQa’s and DQPa;
BWb# controls DQb’s and DQPb; BWc# controls DQc’s and DQPc;
BWd# controls DQd’s and DQPd. Parity is only available on the
x18 and x36 versions.
Synchronous Clock Enable: This active LOW input permits CLK to
propogate throughout the device. When CKE# is HIGH, the
device ignores the CLK input and effectively internally extends
the previous CLK cycle. This input must meet the setup and hold
times around the rising edge of CLK.
Read/Write: This input determines the cycle type when ADV/LD#
is LOW and is the only means for determining READs and
WRITEs. READ cycles may not be converted into WRITEs (and vice
versa) other than by loading a new address. A LOW on this pin
permits BYTE WRITE operations to meet the setup and hold times
around the rising edge of CLK. Full bus-width WRITEs occur if all
byte write enables are LOW.
Clock: This signal registers the address, data, chip enable, byte
write enables and burst control inputs on its rising edge. All
synchronous inputs must meet setup and hold times around the
clock’s rising edge.
Synchronous Chip Enable: This active LOW input is used to enable
the device. CE# is sampled only when a new external address is
loaded.
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in
the memory array is retained. When ZZ is active, all other inputs
are ignored.
Synchronous Chip Enable: This active HIGH input is used to
enable the device and is sampled only when a new external
address is loaded.
(continued on next page)
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_2.p65 – Rev. 6/01
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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