MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL output or with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
IN1→
1
IN2→
2
IN3→
3
IN4→ 4
INPUT
IN5→
5
IN6→
6
IN7→ 7
IN8→ 8
GND 9
18
→O1
17
→O2
16
→O3
15 →O4
OUTPUT
14
→O5
13
→O6
12 →O7
11 →O8
10 →COM COMMON
Package type 18P4G(P)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7kΩ between the base and input pin. A spike-
killer clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.
NC 1
IN1→
2
IN2→
3
IN3→ 4
INPUT
IN4→
5
IN5→
6
IN6→
7
IN7→ 8
IN8→ 9
20 NC
19
→O1
18
→O2
17
→O3
16 →O4
OUTPUT
15
→O5
14
→O6
13 →O7
12 →O8
GND 10
11 →COM COMMON
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
INPUT
2.7K
COM
OUTPUT
7.2K
3K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999