MA4E2514 Series
SURMOUNTTM Low and Medium Barrier Silicon
Schottky Diodes: Tee Pair
Electrical Specifications @ 25°C (Measured as Single Diodes) 1,2,3
M/A-COM Products
Rev. V5
Model Number
Type
Recommended Vf @ 1 mA Vb @ 10 uA
Freq. Range
(mV)
(V)
MA4E2514L
MA4E2514M
Low Barrier
DC - 18 GHz
Medium Barrier DC - 18 GHz
330 Max
300 Typ
470 Max
400 Typ
3 Min
5 Typ
3 Min
5 Typ
Ct @ 0 V
(pF)
0.12 Max
0.10 Typ
0.12 Max
0.10 Typ
Rt Slope Resistance
(Vf1– Vf2)/
(10.5 mA - 9.5 mA)
(Ω)
16 Typ
20 Max
12 Typ
18 Max
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance.
2. Max Forward Voltage Difference Δ Vf @ 1 mA: 10 mV
3. Max Total Capacitance Difference Δ Ct @ 0 V: 0.03 pF
Absolute Maximum Ratings 4
Parameter
Value
Applications
The MA4E2514 Family of Surmount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power applica-
tions such as mixers, sub-harmonic mixers, detectors
and limiters. The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes
with the corresponding Surmount diode, which can be
connected to a hard or soft substrate circuit with sol-
der.
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
-40°C to +150°C
-40°C to +150°C
20 mA
5V
+ 20 dBm
50 mW
Handling
Electrostatic Discharge
( ESD ) Classification 5
Class 0
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for individ-
ual components. The top surface of the die has a
protective polyimide coating to minimize damage.
The rugged construction of these Surmount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry stan-
dard electrostatic discharge (ESD) control is required
at all times, due to the sensitive nature of Schottky
junctions. Bulk handling should insure that abrasion
and mechanical shock are minimized.
Die Bonding
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the bottom
surface of these devices, and are opposite the active
junction. The devices are well suited for high tem-
perature solder attachment onto hard substrates.
4. Exceeding any of these values may result in permanent dam-
age.
5. Human Body Model
Die Bonding
For Hard substrates, we recommend utilizing a vac-
uum tip and force of 60 to 100 grams applied uni-
formly to the top surface of the device, using a hot gas
bonder with equal heat applied across the bottom
mounting pads of the device. When soldering to soft
substrates, it is recommended to use a lead-tin inter-
face at the circuit board mounting pads. Position the
die so that its mounting pads are aligned with the cir-
cuit board mounting pads. Reflow the solder paste by
applying equal heat to the circuit at both die-mounting
pads. The solder joint must not be made one at a
time, creating unequal heat flow and thermal stress.
Solder reflow should not be performed by causing
heat to flow through the top surface of the die. Since
the HMIC glass is transparent, the edges of the
mounting pads can be visually inspected through the
die after the die attach is completed.
2
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development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
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information contained herein without notice.